Switching Transition Modeling of eGaN HEMT in Power Converters

journal contribution

posted on 2023-03-01, 01:08 authored by Guidong Zhang, Yuanhang He, Samson YuSamson Yu, Yun Zhang, Chi K Tse

Switching Transition Modeling of eGaN HEMT in Power Converters

History

Journal

IEEE Transactions on Power Electronics

Volume

38

Pagination

4251-4256

Location

Piscataway, N.J.

ISSN

0885-8993

eISSN

1941-0107

Language

English

Publication classification

C1 Refereed article in a scholarly journal

Issue

4

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Publication URL

http://dx.doi.org/10.1109/tpel.2023.3237333

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Categories

Electrical engineering not elsewhere classified

Keywords

accurate switching modeling , enhanced gallium nitride high electron mobility transistor (eGaN HEMT)high-order dc-dc converter

Licence

All Rights Reserved

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