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The influence of Sn doping on the growth of In2 O3 on Y-stabilized ZrO2 (100) by oxygen plasma assisted molecular beam epitaxy
Version 2 2024-06-13, 12:12
Version 1 2020-09-22, 16:40
journal contribution
posted on 2024-06-13, 12:12 authored by A Bourlange, DJ Payne, RG Palgrave, H Zhang, JS Foord, RG Egdell, RMJ Jacobs, TD Veal, PDC King, CF McConvilleThe influence of Sn doping on the growth of In2 O3 on Y-stabilized ZrO2 (100) by oxygen plasma assisted molecular beam epitaxy
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Journal
Journal of Applied PhysicsVolume
106Article number
ARTN 013703Publisher DOI
ISSN
0021-8979eISSN
1089-7550Language
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
1Publisher
AMER INST PHYSICSUsage metrics
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No categories selectedKeywords
Science & TechnologyPhysical SciencesPhysics, AppliedPhysicscarrier densityconduction bandsdoping profilesindium compoundsinfrared spectralattice constantsmolecular beam epitaxial growthphotoelectron spectraplasma materials processingreflectivitysemiconductor dopingsemiconductor growthsemiconductor materialssemiconductor thin filmsspectral line intensityINDIUM-TIN-OXIDEX-RAY PHOTOEMISSIONDILUTE ELECTRON-GASSB-DOPED SNO2PHOTOELECTRON-SPECTRANEUTRON-DIFFRACTIONDEFECT STRUCTURETHIN-FILMSTRANSPARENTZIRCONIA
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