Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO 2(111)
Version 2 2024-06-13, 12:14Version 2 2024-06-13, 12:14
Version 1 2020-09-22, 16:30Version 1 2020-09-22, 16:30
journal contribution
posted on 2024-06-13, 12:14 authored by KHL Zhang, VK Lazarov, TD Veal, FE Oropeza, CF McConville, RG Egdell, A WalshThickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO 2(111)
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Journal of Physics Condensed MatterVolume
23Article number
ARTN 334211Location
EnglandPublisher DOI
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0953-8984eISSN
1361-648XLanguage
EnglishPublication classification
C1 Refereed article in a scholarly journalIssue
33Publisher
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