Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO 2(111)

Zhang, K H L; Lazarov, V K; Veal, T D; Oropeza, F E; McConville, Chris; Egdell, R G; Walsh, A

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Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO 2(111)

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Version 1 2020-09-22, 16:30

journal contribution

posted on 2011-08-24, 00:00 authored by K H L Zhang, V K Lazarov, T D Veal, F E Oropeza, Chris McConville, R G Egdell, A Walsh

Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO 2(111)

History

Journal

Journal of Physics Condensed Matter

Volume

23

Issue

33

Article number

ARTN 334211

Publisher

IOP PUBLISHING LTD

Location

England

Publisher DOI

https://doi.org/10.1088/0953-8984/23/33/334211

ISSN

0953-8984

eISSN

1361-648X

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000294060600013&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1 Refereed article in a scholarly journal

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Keywords

Science & Technology Physical Sciences Physics, Condensed Matter Physics TOTAL-ENERGY CALCULATIONS OPTICAL-PROPERTIES INDIUM OXIDE SURFACE-MORPHOLOGY ITO FILMS CONDUCTIVITY PATTERN Condensed Matter Physics

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Thickness dependence of the strain, band gap and transport properties of epitaxial In2O3 thin films grown on Y-stabilised ZrO 2(111)

History

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eISSN

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