Transition from electron accumulation to depletion at InGaN surfaces

Veal, TD; Jefferson, PH; Piper, LFJ; McConville, CF; Joyce, TB; Chalker, PR; Considine, L; Lu, H; Schaff, WJ

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Transition from electron accumulation to depletion at InGaN surfaces

Version 2 2024-06-13, 02:43

Version 1 2020-09-22, 17:05

journal contribution

posted on 2024-06-13, 02:43 authored by TD Veal, PH Jefferson, LFJ Piper, CF McConville, TB Joyce, PR Chalker, L Considine, H Lu, WJ Schaff

Transition from electron accumulation to depletion at InGaN surfaces

History

Journal

Applied Physics Letters

Volume

89

Article number

ARTN 202110

Publisher DOI

https://doi.org/10.1063/1.2387976

ISSN

0003-6951

eISSN

1077-3118

Language

English

Author URL

http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000242100200044&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a045e4b2bb1f2b747c68c720ec8913b7

Publication classification

C1 Refereed article in a scholarly journal

Issue

20

Publisher

AMER INST PHYSICS

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Keywords

Science & Technology Physical Sciences Physics, Applied Physics BAND OFFSETS INN GAN ALN Technology

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File(s) not publicly available

Transition from electron accumulation to depletion at InGaN surfaces

History

Journal

Volume

Article number

Publisher DOI

ISSN

eISSN

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Author URL

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Publisher

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Keywords

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