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Tuning the Schottky barrier height in a multiferroic In2Se3/Fe3GeTe2 van der Waals heterojunction

Version 2 2024-06-05, 12:00
Version 1 2022-01-12, 08:44
journal contribution
posted on 2024-06-05, 12:00 authored by M Javaid, PD Taylor, Sherif AbbasSherif Abbas, MJS Spencer
Our work presents a tuneable and switchable Schottky barrier without the need to apply any external electric field or strain, which promotes the controllability of carrier transport in high-density memory devices.

History

Journal

Nanoscale

Volume

14

Pagination

4114-4122

Location

Cambridge, Eng.

Publisher DOI

ISSN

2040-3364

eISSN

2040-3372

Language

English

Author URL

Publication classification

C1.1 Refereed article in a scholarly journal

Issue

11

Publisher

Royal Society of Chemistry (RSC)

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    Keywords

    ChemistryChemistry, MultidisciplinaryHETEROSTRUCTUREMaterials ScienceMaterials Science, MultidisciplinaryNanoscience & NanotechnologyPhysical SciencesPhysicsPhysics, AppliedScience & TechnologyScience & Technology - Other TopicsTechnology3403 Macromolecular and materials chemistry3406 Physical chemistry4016 Materials engineering

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