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Tunneling magnetoresistance observed in La0.67 Sr0.33 Mn O3 /organic molecule/Co junctions

Version 2 2024-06-13, 10:37
Version 1 2017-07-13, 10:50
journal contribution
posted on 2024-06-13, 10:37 authored by W Xu, GJ Szulczewski, P Leclair, I Navarrete, R Schad, G Miao, H Guo, A Gupta
Tunneling magnetoresistance has been observed in organic based spintronic devices using the organic semiconductors tetraphenyl porphyrin (TPP) and aluminum tris(8-hyroxyquinoline) (Al q3) as the spacer layer between La0.67 Sr0.33 Mn O3 (LSMO) and Co films. The evidence for tunneling is twofold: (1) nonlinear current and conductance versus voltage curves and (2) an increasing junction resistance with decreasing temperature. In general, the magnetoresistance is found to decrease with increasing bias voltage and increasing temperature in both Al q3 and TPP junctions. These results demonstrate that organic molecules can form tunnel barriers that perform as well as most inorganic barrier materials on LSMO. © 2007 American Institute of Physics.

History

Journal

Applied Physics Letters

Volume

90

Location

United States

ISSN

0003-6951

Publication classification

CN.1 Other journal article

Issue

7

Publisher

AIP Publishing LLC

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