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Valence-band structure of InN from x-ray photoemission spectroscopy

Version 2 2024-06-13, 12:12
Version 1 2020-09-22, 15:54
journal contribution
posted on 2024-06-13, 12:12 authored by LFJ Piper, TD Veal, PH Jefferson, CF McConville, F Fuchs, J Furthmüller, F Bechstedt, H Lu, WJ Schaff
The valence-band structure of clean, high-quality, single-crystalline wurtzite InN thin films prepared with atomic hydrogen is investigated using x-ray photoemission spectroscopy. The In 4 d 5 ∕ 2 semicore level due to the In-N bond is found to lie 16.0 ± 0.1 eV above the valence band maximum. Experimental valence-band spectra are compared with theoretical calculations of the valence-band density of states (VB-DOS), employing density functional theory within the local density approximation with quasiparticle and self-interaction corrections. Agreement between the experimental valence band spectrum and the theoretical VB-DOS is obtained.

History

Journal

Physical Review B - Condensed Matter and Materials Physics

Volume

72

Article number

245319

Pagination

245319-1-245319-5

Location

College Park, Md.

ISSN

1098-0121

eISSN

1550-235X

Language

eng

Publication classification

C1 Refereed article in a scholarly journal

Copyright notice

2005, American Physical Society

Issue

24

Publisher

American Physical Society