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Valence-band structure of InN from x-ray photoemission spectroscopy
journal contribution
posted on 2005-12-14, 00:00 authored by L F J Piper, T D Veal, P H Jefferson, Chris McConvilleChris McConville, F Fuchs, J Furthmüller, F Bechstedt, H Lu, W J SchaffThe valence-band structure of clean, high-quality, single-crystalline wurtzite InN thin films prepared with atomic hydrogen is investigated using x-ray photoemission spectroscopy. The
In
4
d
5
∕
2
semicore level due to the In-N bond is found to lie
16.0
±
0.1
eV
above the valence band maximum. Experimental valence-band spectra are compared with theoretical calculations of the valence-band density of states (VB-DOS), employing density functional theory within the local density approximation with quasiparticle and self-interaction corrections. Agreement between the experimental valence band spectrum and the theoretical VB-DOS is obtained.
In
4
d
5
∕
2
semicore level due to the In-N bond is found to lie
16.0
±
0.1
eV
above the valence band maximum. Experimental valence-band spectra are compared with theoretical calculations of the valence-band density of states (VB-DOS), employing density functional theory within the local density approximation with quasiparticle and self-interaction corrections. Agreement between the experimental valence band spectrum and the theoretical VB-DOS is obtained.
