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Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
journal contribution
posted on 2008-12-02, 00:00 authored by T D Veal, P D C King, S A Hatfield, L R Bailey, Chris McConvilleChris McConville, B Martel, J C Moreno, E Frayssinet, F Semond, J Zúñiga-PérezValence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy
History
Journal
Applied Physics LettersVolume
93Issue
20Article number
ARTN 202108Publisher
AMER INST PHYSICSPublisher DOI
ISSN
0003-6951eISSN
1077-3118Language
EnglishPublication classification
C1 Refereed article in a scholarly journalUsage metrics
Categories
Keywords
Science & TechnologyPhysical SciencesPhysics, AppliedPhysicsaluminium compoundsconduction bandsgallium compoundsIII-V semiconductorsII-VI semiconductorsindium compoundssemiconductor heterojunctionsvalence bandswide band gap semiconductorsX-ray photoelectron spectrazinc compoundsMOLECULAR-BEAM EPITAXYII-VISEMICONDUCTORSINNZNOINTERFACEGROWTHSTATESGAP