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Vanadium-Doped Monolayer MoS2with Tunable Optical Properties for Field-Effect Transistors

journal contribution
posted on 2021-01-01, 00:00 authored by J Zhang, Y Zhu, M Tebyetekerwa, D Li, Dan Liu, Weiwei LeiWeiwei Lei, Lifeng Wang, Y Zhang, Y Lu
Vanadium-Doped Monolayer MoS2with Tunable Optical Properties for Field-Effect Transistors

History

Alternative title

Vanadium-Doped Monolayer MoS2with Tunable Optical Properties for Field-Effect Transistors

Journal

ACS Applied Nano Materials

Volume

4

Pagination

769-777

Location

Washington, DC

Publisher DOI

ISSN

2574-0970

eISSN

2574-0970

Language

eng

Publication classification

C1 Refereed article in a scholarly journal

Issue

1

Publisher

American Chemical Society

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    Research Publications

    Categories

    Keywords

    doping levelexciton recombinationp-doping effectsubstitutional dopingtunable optical band gapACT node of the Australian National Fabrication Facility (ANFF)Australian Research Council Discovery Program (DP190103290)Nation Natural Science Foundation of China (51802104).4016 Materials engineering

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