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Zone melting recrystallization of polysilicon by a focused-lamp with unsymmetric trapezoidal power distribution

journal contribution
posted on 1991-03-01, 00:00 authored by Jinho ChoiJinho Choi, H J Song, C K Kim
Unsymmetric trapezoidal power distribution produced by a tungsten halogen lamp and a focusing mirror has been employed in zone-melting recrystallization of polysilicon. Focusing mirror is designed based on the ray-tracing method. Experimental results show that the trapezoidal type power distribution is superior to the Gaussian type which is obtained with a conventional strip heater, in that the controllability and reproducibility are significantly improved while the recrystallized film shows comparable or slightly better crystal quality. It has been found that a lower thermal gradient at the liquid-tosolid interface under a lower scan speed improves the quality of the recrystallized film prepared by the trapezoidal power distribution.

History

Journal

Journal of electronic materials

Volume

20

Issue

3

Pagination

231 - 235

Publisher

Springer

Location

Berlin, Germany

ISSN

0361-5235

eISSN

1543-186X

Language

eng

Publication classification

C1.1 Refereed article in a scholarly journal

Copyright notice

1991, The Mineral, Metal & Materials Society, Inc.