Controlled growth of zinc nanowires

Chen, Yong Jun, Chi, Bo, Zhang, Hong Zhou, Chen, Hua and Chen, Ying 2007, Controlled growth of zinc nanowires, Materials letters, vol. 61, no. 1, pp. 144-147, doi: 10.1016/j.matlet.2006.04.044.

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Title Controlled growth of zinc nanowires
Author(s) Chen, Yong Jun
Chi, Bo
Zhang, Hong Zhou
Chen, Hua
Chen, YingORCID iD for Chen, Ying
Journal name Materials letters
Volume number 61
Issue number 1
Start page 144
End page 147
Publisher Elsevier BV
Place of publication Amsterdam, The Netherlands
Publication date 2007-01
ISSN 0167-577X
Keyword(s) zinc nanowires
chemical vapor deposition
growth mechanism
photoluminescence mechanism
Summary Zinc nanowires have been synthesized by heating a mixture of boron and zinc oxide (ZnO) powders at 1050 °C under a nitrogen atmosphere. The influences of the gas flow rate and the substrate character on the nanowire formation were investigated. It was found that higher-flow rate of gas led to the formation of thinner nanowires; while lower-flow rate of gas produced thicker nanowires and even particles due to the higher partial pressure of Zn vapor in this case. Zn nanowires can be produced on alumina and quartz substrates, but not on a stainless-steel substrate under the same or different synthetic conditions. Photoluminescence measurements were conducted on Zn nanowires and particles and weak emission bands at 482 and 493 nm were observed, which may be contributed by the thin ZnO film on the nanowire surface.
Language eng
DOI 10.1016/j.matlet.2006.04.044
Field of Research 100706 Nanofabrication, Growth and Self Assembly
HERDC Research category C1.1 Refereed article in a scholarly journal
Copyright notice ©2006, Elsevier B.V.
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