Pure boron nitride nanowires produced from boron triiodide

Chen, Yong Jun, Zhang, Hong Zhou and Chen, Ying 2006, Pure boron nitride nanowires produced from boron triiodide, Nanotechnology, vol. 17, no. 3, pp. 786-789, doi: 10.1088/0957-4484/17/3/028.

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Title Pure boron nitride nanowires produced from boron triiodide
Author(s) Chen, Yong Jun
Zhang, Hong Zhou
Chen, YingORCID iD for Chen, Ying orcid.org/0000-0002-7322-2224
Journal name Nanotechnology
Volume number 17
Issue number 3
Start page 786
End page 789
Publisher Institute of Physics Publishing
Place of publication London, England
Publication date 2006-02-14
ISSN 0957-4484
Summary A thick layer of pure boron nitride (BN) nanowires with a uniform diameter of 20 nm was synthesized for the first time using a CVD process with a new precursor of boron triiodide (BI3). Transmission electron microscopy revealed a nanocrystalline structure in the BN nanowires and the absence of any catalyst particle. Some BN nanowires self-assembled into thick threads up to several hundred micrometres long on top of the nanowire layer. The nitriding reactions and lack of catalyst suggest new formation mechanisms of the BN nanowires.
Language eng
DOI 10.1088/0957-4484/17/3/028
Field of Research 100707 Nanomanufacturing
HERDC Research category C1.1 Refereed article in a scholarly journal
Copyright notice ©2006, IOP Publishing Ltd
Persistent URL http://hdl.handle.net/10536/DRO/DU:30016480

Document type: Journal Article
Collections: Institute for Technology Research and Innovation
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