Structure effect on the oxygen permeation properties of barium bismuth iron oxide membranes

Sunarso, Jaka, Liu, Shaomin and Diniz da Costa, João C. 2010, Structure effect on the oxygen permeation properties of barium bismuth iron oxide membranes, Journal of membrane science, vol. 351, no. 1-2, pp. 44-49, doi: 10.1016/j.memsci.2010.01.026.

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Title Structure effect on the oxygen permeation properties of barium bismuth iron oxide membranes
Author(s) Sunarso, Jaka
Liu, Shaomin
Diniz da Costa, João C.
Journal name Journal of membrane science
Volume number 351
Issue number 1-2
Start page 44
End page 49
Publisher Elsevier BV
Place of publication Amsterdam, The Netherlands
Publication date 2010-04-01
ISSN 0376-7388
Keyword(s) Barium bismuth iron oxide
Perovskite membrane
oxygen separation
Summary In this work, we investigated the oxygen permeation properties of barium bismuth iron oxide within the family of [Ba2−3xBi3x−1][Fe2xBi1−2x]O2+3x/2 for x = 0.17–0.60. The structure changed progressively from cubic to tetragonal and then to hexagonal as function of x in accordance with the different relative amounts of bismuth on A-site and B-site of ABO3−δ perovskite lattices. We found that the oxygen flux and electrical conductivity correlated strongly, and it was prevalent for the cubic structure (x = 0.33–0.40) which conferred the highest oxygen flux of 0.59 ml min−1 cm−2 at 950 °C for a disk membrane x = 0.33 with a thickness of 1.2 mm. By reducing the thickness of the disk membrane to 0.8 mm, the oxygen flux increased to 0.77 ml min−1 cm−2, suggesting both surface kinetics and ion diffusion controlled oxygen flux, though the former was more prominent at higher temperatures. For disk membranes x = 0.45–0.60, the perovskite structure changed to tetragonal and hexagonal, and the oxygen flux was insignificant below 900 °C, clearly indicating electron conduction properties only. However, for two compositions with relatively high bismuth content, e.g. x = 0.55 and 0.60, there was a sudden and significant rise of oxygen permeability above 900 °C, by more than one order of magnitude. These materials changed conduction behavior from metallic to semiconductor at around 900 °C. These results suggest the advent of mixed ionic electronic conducting properties caused by the structure transition as bismuth ions changed their valence states to compensate for the oxygen vacancies formed within the perovskite lattices.
Language eng
DOI 10.1016/j.memsci.2010.01.026
Field of Research 039999 Chemical Sciences not elsewhere classified
Socio Economic Objective 970103 Expanding Knowledge in the Chemical Sciences
HERDC Research category C1.1 Refereed article in a scholarly journal
Copyright notice ©2010, Elsevier B.V.
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