Corrosion properties of a RF-magnetron-sputtered TiN coating deposited on 316L stainless steel

Nam, Nguyen Dang, Kim, Jung Gu, Tai, Phan Huu and Yoon, Dae Ho 2009, Corrosion properties of a RF-magnetron-sputtered TiN coating deposited on 316L stainless steel, Korean physical society. Journal, vol. 54, no. 3, pp. 1104-1108, doi: 10.3938/jkps.54.1104.

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Title Corrosion properties of a RF-magnetron-sputtered TiN coating deposited on 316L stainless steel
Author(s) Nam, Nguyen Dang
Kim, Jung Gu
Tai, Phan Huu
Yoon, Dae Ho
Journal name Korean physical society. Journal
Volume number 54
Issue number 3
Start page 1104
End page 1108
Total pages 5
Publisher Han'guk Mulli Hakhoe
Place of publication Seoul, Korea
Publication date 2009-03
ISSN 0374-4884
Keyword(s) TiN coating
electrochemical impedance spectroscopy
pitting resistance
Summary The effect of rf-power in the range from 100 to 200 W on the electrochemical properties of TiN coatings deposited on 316L stainless steel was investigated by using various electrochemical techniques in a 3.5-wt\% NaCl solution. Surface analyses were also conducted to analyze the coating characteristics. X-ray diffraction (XRD) and atomic force microscopy (AFM) analyses confirmed that increasing the rf-power led to a preferred orientation of the TiN(200) microstructure and decreased the surface roughness. The potentiodynamic test results confirmed the passive behavior of all of the specimens with low passive current densities and demonstrated that the effective pitting resistance of the TiN coatings increased with increasing rf-power. The electrochemical impedance spectroscopy (EIS) tests showed that the TiN films deposited with high rf-power had excellent corrosion resistance during an immersion time of 720 h due to their high total resistance and low porosity.
Language eng
DOI 10.3938/jkps.54.1104
Field of Research 099999 Engineering not elsewhere classified
Socio Economic Objective 970109 Expanding Knowledge in Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
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