Ab initio electronic properties of dual phosphorus monolayers in silicon
Drumm, Daniel W, Per, Manolo C, Budi, Akin, Hollenberg, Lloyd C and Russo, Salvy P 2014, Ab initio electronic properties of dual phosphorus monolayers in silicon, Nanoscale research letters, vol. 9, no. 1, pp. 1-10, doi: 10.1186/1556-276X-9-443.
In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers’ relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated.
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Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.