Surface-gate-defined single-electron transistor in a MoS2 bilayer

Javaid, M, Drumm, Daniel W, Russo, Salvy P and Greentree, Andrew D 2017, Surface-gate-defined single-electron transistor in a MoS2 bilayer, Nanotechnology, vol. 28, no. 12, pp. 1-9, doi: 10.1088/1361-6528/aa5ce0.

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Title Surface-gate-defined single-electron transistor in a MoS2 bilayer
Author(s) Javaid, M
Drumm, Daniel WORCID iD for Drumm, Daniel W
Russo, Salvy P
Greentree, Andrew D
Journal name Nanotechnology
Volume number 28
Issue number 12
Article ID 125203
Start page 1
End page 9
Total pages 9
Publisher IOP Press
Place of publication London, Eng.
Publication date 2017-03-24
ISSN 1361-6528
Keyword(s) science & technology
physical sciences
nanoscience & nanotechnology
materials science
MoS2 bilayer
single-electron transistor
metal dichalcogenides
ab initio
quantum dot
finite-element modeling
transport simulations
Summary We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS2 bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS2 bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.
Language eng
DOI 10.1088/1361-6528/aa5ce0
Field of Research 030199 Analytical Chemistry not elsewhere classified
MD Multidisciplinary
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
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Document type: Journal Article
Collection: Faculty of Health
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