Epitaxial InGaN on nitridated Si(111) for photovoltaic applications

Yao, Y, Aldous, JD, Won, D, Redwing, JM, Linhart, W, McConville, Christopher, Reeves, RJ, Veal, TD and Durbin, SM 2012, Epitaxial InGaN on nitridated Si(111) for photovoltaic applications, in Conference Record of the IEEE Photovoltaic Specialists Conference, IEEE,, pp. 2617-2620, doi: 10.1109/PVSC.2012.6318131.

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Title Epitaxial InGaN on nitridated Si(111) for photovoltaic applications
Author(s) Yao, Y
Aldous, JD
Won, D
Redwing, JM
Linhart, W
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Reeves, RJ
Veal, TD
Durbin, SM
Conference name 38th IEEE Photovoltaic Specialists Conference (PVSC)
Conference location Austin, TX
Conference dates 2012/06/03 - 2012/06/08
Title of proceedings Conference Record of the IEEE Photovoltaic Specialists Conference
Publication date 2012
Start page 2617
End page 2620
Total pages 4
Publisher IEEE
Keyword(s) Science & Technology
Technology
Physical Sciences
Energy & Fuels
Engineering, Electrical & Electronic
Physics, Applied
Engineering
Physics
silicon nitridation
crystalline SiN
InGaN/Si heterojunction
InGaN
photovoltaics
molecular beam epitaxy
BAND-GAP
HETEROJUNCTION
ALLOYS
FILMS
INN
SI
ISBN 9781467300643
ISSN 0160-8371
Language eng
DOI 10.1109/PVSC.2012.6318131
Indigenous content off
HERDC Research category E1.1 Full written paper - refereed
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142168

Document type: Conference Paper
Collection: Office of the Deputy Vice-Chancellor (Research)
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