Ambient temperature diodes and field‐effect transistors in InSb/In1−xAlxSb

Ashley, T, Dean, AB, Elliott, CT, McConville, Christopher F, Pryce, GJ and Whitehouse, CR 1991, Ambient temperature diodes and field‐effect transistors in InSb/In1−xAlxSb, Applied Physics Letters, vol. 59, no. 14, pp. 1761-1763, doi: 10.1063/1.106216.

Title Ambient temperature diodes and field‐effect transistors in InSb/In1−xAlxSb
Author(s) Ashley, T
Dean, AB
Elliott, CT
McConville, Christopher FORCID iD for McConville, Christopher F
Pryce, GJ
Whitehouse, CR
Journal name Applied Physics Letters
Volume number 59
Issue number 14
Start page 1761
End page 1763
Total pages 3
Publication date 1991-12-01
ISSN 0003-6951
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Language eng
DOI 10.1063/1.106216
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
10 Technology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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