Plasmon damping in molecular beam epitaxial-grown InAs(100)

Veal, TD, Bell, GR and McConville, Christopher F 2002, Plasmon damping in molecular beam epitaxial-grown InAs(100), Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 20, no. 4, pp. 1766-1770, doi: 10.1116/1.1491541.


Title Plasmon damping in molecular beam epitaxial-grown InAs(100)
Author(s) Veal, TD
Bell, GR
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Journal name Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume number 20
Issue number 4
Start page 1766
End page 1770
Total pages 5
Publisher A V S AMER INST PHYSICS
Place of publication SANTA FE, NEW MEXICO
Publication date 2002-07-01
ISSN 1071-1023
Keyword(s) Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
Physics, Applied
Engineering
Science & Technology - Other Topics
Physics
ELECTRON ACCUMULATION LAYERS
INAS
SURFACES
TRANSPORT
GAAS
INSB
Language eng
DOI 10.1116/1.1491541
Indigenous content off
Field of Research 0401 Atmospheric Sciences
0901 Aerospace Engineering
0912 Materials Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142316

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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