Determination of the substitutional nitrogen content and the electron effective mass in InN<inf>x</inf>Sb<inf>1-x</inf> (001) epitaxial layers

Mahboob, I, Veal, TD and McConville, Christopher F 2003, Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers, IEE Proceedings: Optoelectronics, vol. 150, no. 1, pp. 102-104, doi: 10.1049/ip-opt:20030045.

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Title Determination of the substitutional nitrogen content and the electron effective mass in InNxSb1-x (001) epitaxial layers
Author(s) Mahboob, I
Veal, TD
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Journal name IEE Proceedings: Optoelectronics
Volume number 150
Issue number 1
Start page 102
End page 104
Total pages 3
Publisher IEE-INST ELEC ENG
Publication date 2003-02-01
ISSN 1350-2433
Keyword(s) Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Optics
Telecommunications
Engineering
X-RAY-DIFFRACTION
BAND-STRUCTURE
V ALLOYS
SPECTROSCOPY
GANXAS1-X
ENERGY
GAAS
GAP
Language eng
DOI 10.1049/ip-opt:20030045
Indigenous content off
HERDC Research category CN.1 Other journal article
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142328

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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