Indium nitride: Evidence of electron accumulation

Veal, TD, Mahboob, I, Piper, LFJ, McConville, Christopher F, Lu, H and Schaff, WJ 2004, Indium nitride: Evidence of electron accumulation, Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, vol. 22, no. 4, pp. 2175-2178, doi: 10.1116/1.1771672.


Title Indium nitride: Evidence of electron accumulation
Author(s) Veal, TD
Mahboob, I
Piper, LFJ
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Lu, H
Schaff, WJ
Journal name Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume number 22
Issue number 4
Start page 2175
End page 2178
Total pages 4
Publisher A V S AMER INST PHYSICS
Place of publication Kailua, HI
Publication date 2004-07-01
ISSN 1071-1023
Keyword(s) Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
Physics, Applied
Engineering
Science & Technology - Other Topics
Physics
MOLECULAR-BEAM EPITAXY
FUNDAMENTAL-BAND GAP
IN1-XGAXN ALLOYS
INN
ENERGY
LAYER
Language eng
DOI 10.1116/1.1771672
Indigenous content off
Field of Research 0401 Atmospheric Sciences
0901 Aerospace Engineering
0912 Materials Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142335

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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