Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications

Buckle, L, Coomber, SD, Ashley, T, Jefferson, PH, Walker, D, Veal, TD, McConville, Christopher F and Thomas, PA 2009, Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications, Microelectronics Journal, vol. 40, no. 3, pp. 399-402, doi: 10.1016/j.mejo.2008.06.007.

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Title Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications
Author(s) Buckle, L
Coomber, SD
Ashley, T
Jefferson, PH
Walker, D
Veal, TD
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Thomas, PA
Journal name Microelectronics Journal
Volume number 40
Issue number 3
Start page 399
End page 402
Total pages 4
Publisher ELSEVIER SCI LTD
Place of publication Univ Nottingham, Nottingham, ENGLAND
Publication date 2009-03-01
ISSN 0026-2692
1879-2391
Keyword(s) Science & Technology
Technology
Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
Engineering
Science & Technology - Other Topics
Dilute nitride
Indium antimonide
InSb
Gallium antimonide
GaSb
Infrared
MWIR
LWIR
ALLOYS
MBE
Language eng
DOI 10.1016/j.mejo.2008.06.007
Indigenous content off
Field of Research 0906 Electrical and Electronic Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142754

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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