Vanadium-Doped Monolayer MoS2with Tunable Optical Properties for Field-Effect Transistors

Zhang, J, Zhu, Y, Tebyetekerwa, M, Li, D, Liu, Dan, Lei, Weiwei, Wang, Lifeng, Zhang, Y and Lu, Y 2021, Vanadium-Doped Monolayer MoS2with Tunable Optical Properties for Field-Effect Transistors, ACS Applied Nano Materials, vol. 4, no. 1, pp. 769-777, doi: 10.1021/acsanm.0c03083.

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Title Vanadium-Doped Monolayer MoS2with Tunable Optical Properties for Field-Effect Transistors
Formatted title Vanadium-Doped Monolayer MoS2with Tunable Optical Properties for Field-Effect Transistors
Author(s) Zhang, J
Zhu, Y
Tebyetekerwa, M
Li, D
Liu, DanORCID iD for Liu, Dan orcid.org/0000-0001-6875-419X
Lei, WeiweiORCID iD for Lei, Weiwei orcid.org/0000-0003-2698-299X
Wang, LifengORCID iD for Wang, Lifeng orcid.org/0000-0002-9334-6873
Zhang, Y
Lu, Y
Journal name ACS Applied Nano Materials
Volume number 4
Issue number 1
Start page 769
End page 777
Total pages 9
Publisher American Chemical Society
Place of publication Washington, DC
Publication date 2021
ISSN 2574-0970
2574-0970
Keyword(s) doping level
exciton recombination
p-doping effect
substitutional doping
tunable optical band gap
Science & Technology
Technology
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Science & Technology - Other Topics
Materials Science
PHOTOLUMINESCENCE
TRIONS
Language eng
DOI 10.1021/acsanm.0c03083
Indigenous content off
HERDC Research category C1 Refereed article in a scholarly journal
Grant ID ACT node of the Australian National Fabrication Facility (ANFF)
Australian Research Council Discovery Program (DP190103290)
Nation Natural Science Foundation of China (51802104).
Persistent URL http://hdl.handle.net/10536/DRO/DU:30147990

Document type: Journal Article
Collections: Institute for Frontier Materials
GTP Research
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