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High-mobility p-type semiconducting two-dimensional β-TeO₂

Zavabeti, A, Aukarasereenont, P, Tuohey, H, Syed, N, Jannat, A, Elbourne, A, Messalea, KA, Zhang, BY, Murdoch, BJ, Partridge, JG, Wurdack, M, Creedon, DL, van Embden, J, Kalantar-Zadeh, K, Russo, SP, McConville, Chris and Daeneke, T 2021, High-mobility p-type semiconducting two-dimensional β-TeO₂, Nature Electronics, vol. 4, no. 4, pp. 277-283, doi: 10.1038/s41928-021-00561-5.

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Title High-mobility p-type semiconducting two-dimensional β-TeO₂
Author(s) Zavabeti, A
Aukarasereenont, P
Tuohey, H
Syed, N
Jannat, A
Elbourne, A
Messalea, KA
Zhang, BY
Murdoch, BJ
Partridge, JG
Wurdack, M
Creedon, DL
van Embden, J
Kalantar-Zadeh, K
Russo, SP
McConville, ChrisORCID iD for McConville, Chris orcid.org/0000-0003-1040-2794
Daeneke, T
Journal name Nature Electronics
Volume number 4
Issue number 4
Start page 277
End page 283
Total pages 7
Publisher Springer Science and Business Media LLC
Place of publication New York, N.Y.
Publication date 2021-04
ISSN 2520-1131
Language eng
DOI 10.1038/s41928-021-00561-5
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30150294

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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Created: Thu, 22 Apr 2021, 23:24:41 EST

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